Atendimento: Segunda à sexta das 8h às 17h
2MBI200U4B-120 módulo IGBT FUJI
Maximum ratings and characteristics (at Tc=25ºC)
| Item | Symbol | Conditions | Rating | Unit |
| Collector-emitter voltage | Vces | – | 1200 | V |
| Gate-emitter voltage | Vges | – | +-20 | V |
| Collector current | Ic | Continuos Tc=25ºC | 300 | A |
| Continuos Tc=80ºC | 200 | |||
| Icp | 1ms Tc=25ºC | 600 | ||
| 1ms Tc=80ºC | 400 | |||
| -Ic | 200 | |||
| -Ic pulse | 400 | |||
| Collector power dissipation | Pc | 1 device | 1040 | W |
| Junction temperature | Tj | – | +150 | ºC |
| Storage temperature | Tstg | – | -40 to +125 | ºC |
| Isolation voltage *¹ | Viso | AC:1min. | 2500 | VAC |
| Screw torque | Item Mounting *² | 3.5 | N·m | |
| Item Terminals *² | 3.5 | N·m |
Note: *¹ between terminal and cooper base – all terminals should be connected together when isolation test will be done; *² recommendable value: 2.5 to 3.5 N·m(m5)
Electrical characteristics (at Tj=25ºC)
| Items | Symbols | Characteristics | Conditions | Units | ||
| Min. | Typ. | Max. | ||||
Zero gate voltagecollector current | Ices | – | – | 2.0 | Vge = 0VVce = 1200V | mA |
| Gate-emitter leakage current | Iges | – | – | 400 | Vce = 0VVge = +- 20V | nA |
| Gate-emitter threshold package | Vge (t.h) | 4.5 | 6.5 | 8.5 | Vce = 20VIc = 200mA | V |
| Collector-emitter saturation voltage | Vce (sat) terminal Tj=25ºC | – | 2.10 | 2.25 | Vge = 15VIc = 200A | V |
| Vce (sat) terminal Tj=125ºC | – | 2.30 | – | |||
| Vce (sat) chip Tj=25ºC | – | 1.90 | 2.05 | |||
| Vce (sat) chip Tj=125ºC | – | 2.10 | – | |||
| Input capacitance | Cies | – | 22 | – | Vce=10V, Vge=0V, f=1MHz | nF |
| Turn-on time | Ton | – | 0.32 | 1.20 | Vcc=600V Ic=200A Vge=+-15V Rg=3.0Ω
| μS |
| Tr | – | 0.10 | 0.60 | |||
| Tr(i) | – | 0.03 | – | |||
| Turn-off time | Toff | – | 0.41 | 1.00 | ||
| Tr | – | 0.07 | 0.30 | |||
| Forward on voltage | Vf (terminal) Tj=25ºC | – | 1.85 | 2.00 | Vge=0V If=200A
| V |
| Vf (terminal) Tj=125ºC | – | 1.95 | – | |||
| Vf (chip) Tj=25ºC | – | 1.65 | 1.80 | |||
| Vf (chip) Tj=125ºC | – | 1.75 | – | |||
| Reverse recovery time | trr | – | – | 0.35 | If=200A | μS |
| Lead resistance, terminal-chip *³ | Rlead | – | 0.97 | – |
| mΩ |
Note: *³ this is the value which is defined mounting on the additional cooling fin with thermal compound.
Thermal resistance characteristics
| Items | Symbols | Characteristics | Conditions | Units | ||
| Min. | Typ. | Max. | ||||
| Thermal resistance | Rth (j-c) | – | – | 0.12 | IGBT | ºC/W |
| Rth (j-c) | – | – | 0.20 | FWD | ||
| Contact thermal resistance | Rth (c-f) *? | – | 0.025 | – | with thermal compound |
Note: *? this is the value which is defined mounting on the additional cooling fin with thermal compound.
